jfet vhf amplifier nchannel depletion maximum ratings rating symbol value unit drainsource voltage v ds 25 vdc draingate voltage v dg 25 vdc gatesource voltage v gs 25 vdc gate current i g 10 madc total device dissipation @ t a = 25 c derate above 25 c p d 350 2.8 mw mw/ c junction temperature range t j 125 c storage temperature range t stg 65 to +150 c electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics gatesource breakdown voltage (i g = 10 m adc, v ds = 0) v (br)gss 25 vdc gate reverse current (v gs = 15 vdc, v ds = 0) (v gs = 15 vdc, v ds = 0, t a = 100 c) i gss 2.0 2.0 nadc m adc gatesource cutoff voltage (v ds = 15 vdc, i d = 2.0 nadc) v gs(off) 8.0 vdc gatesource voltage (v ds = 15 vdc, i d = 0.2 madc) v gs 0.5 7.5 vdc on characteristics zerogatevoltage drain current (1) (v ds = 15 vdc, v gs = 0 vdc) i dss 2.0 20 madc smallsignal characteristics forward transfer admittance (1) (v ds = 15 vdc, v gs = 0, f = 1.0 khz) (v ds = 15 vdc, v gs = 0, f = 100 mhz) ? y fs ? 2000 1600 7500 mhos input admittance (v ds = 15 vdc, v gs = 0, f = 100 mhz) re(y is ) 800 mhos output conductance (v ds = 15 vdc, v gs = 0, f = 100 mhz) re(y os ) 200 mhos input capacitance (v ds = 15 vdc, v gs = 0, f = 1.0 mhz) c iss 7.0 pf reverse transfer capacitance (v ds = 15 vdc, v gs = 0, f = 1.0 mhz) c rss 3.0 pf 1. pulse test; pulse width 630 ms, duty cycle 10%. on semiconductor ? semiconductor components industries, llc, 2001 november, 2001 rev. 2 1 publication order number: mpf102/d mpf102 case 2911, style 5 to92 (to226aa) 1 2 3 1 drain 2 source 3 gate
mpf102 http://onsemi.com 2 f, frequency (mhz) 30 10 b is @ i dss f, frequency (mhz) 5.0 figure 1. input admittance (y is ) figure 2. reverse transfer admittance (y rs ) common source characteristics admittance parameters (v ds = 15 vdc, t channel = 25 c) f, frequency (mhz) 20 f, frequency (mhz) 10 figure 3. forward transadmittance (y fs ) figure 4. output admittance (y os ) g is , input conductance (mmhos) 20 10 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 20 30 50 70 100 200 300 500 700 1000 b is , input susceptance (mmhos) g fs , forward transconductance (mmhos) |b fs |, forward susceptance (mmhos) g rs , reverse transadmittance (mmhos) b rs , reverse susceptance (mmhos) 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 g os , output admittance (mhos) b os , output susceptance (mhos) 3.0 0.05 0.07 0.1 0.2 0.3 0.7 0.5 1.0 2.0 10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 30 50 70 100 200 300 500 700 1000 b is @ 0.25 i dss g is @ i dss g is @ 0.25 i dss b rs @ i dss 0.25 i dss g rs @ i dss , 0.25 i dss g fs @ i dss |b fs | @ i dss |b fs | @ 0.25 i dss b os @ i dss and 0.25 i dss g os @ i dss g os @ 0.25 i dss g fs @ 0.25 i dss
mpf102 http://onsemi.com 3 figure 5. s 11s figure 6. s 12s 0 350 340 330 10 20 30 180 190 200 210 170 160 150 320 310 300 290 280 270 260 250 240 230 220 40 50 60 70 80 90 100 110 120 130 140 0 350 340 330 10 20 30 180 190 200 210 170 160 150 320 310 300 290 280 270 260 250 240 230 220 40 50 60 70 80 90 100 110 120 130 140 0 350 340 330 10 20 30 180 190 200 210 170 160 150 320 310 300 290 280 270 260 250 240 230 220 40 50 60 70 80 90 100 110 120 130 140 0 350 340 330 10 20 30 180 190 200 210 170 160 150 320 310 300 290 280 270 260 250 240 230 220 40 50 60 70 80 90 100 110 120 130 140 1.0 0.9 0.8 0.7 0.6 0.4 0.3 0.2 0.1 0.0 1.0 0.9 0.8 0.7 0.6 0.6 0.5 0.4 0.3 0.3 0.4 0.5 0.6 900 900 800 700 600 500 400 300 200 100 800 700 600 500 400 300 200 100 i d = 0.25 i dss i d = i dss 100 200 300 400 600 700 800 900 500 i d = i dss , 0.25 i dss 900 500 800 700 600 500 400 300 200 100 i d = 0.25 i dss i d = i dss 100 200 300 400 900 600 700 800 900 800 600 400 300 200 200 100 i d = 0.25 i dss i d = i dss 900 100 500 700 300 400 500 600 700 800 figure 7. s 21s figure 8. s 22s common source characteristics sparameters (v ds = 15 vdc, t channel = 25 c, data points in mhz)
mpf102 http://onsemi.com 4 f, frequency (mhz) 10 g ig @ i dss f, frequency (mhz) 0.5 figure 9. input admittance (y ig ) figure 10. reverse transfer admittance (y rg ) common gate characteristics admittance parameters (v dg = 15 vdc, t channel = 25 c) f, frequency (mhz) f, frequency (mhz) figure 11. forward transfer admittance (y fg ) figure 12. output admittance (y og ) g ig , input conductance (mmhos) 20 10 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 20 30 50 70 100 200 300 500 700 1000 b ig , input susceptance (mmhos) g fg , forward transconductance (mmhos) b fg , forward susceptance (mmhos) g rg , reverse transadmittance (mmhos) b rg , reverse susceptance (mmhos) 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 g og , output admittance (mmhos) b og , output susceptance (mmhos) 0.3 0.01 0.1 0.2 10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000 0.01 0.02 0.03 0.3 10 20 30 50 70 100 200 300 500 700 1000 b ig @ 0.25 i dss b ig @ i dss g rg @ 0.25 i dss g fg @ i dss g fg @ 0.25 i dss b rg @ 0.25 i dss b og @ i dss , 0.25 i dss g og @ i dss g og @ 0.25 i dss 0.2 0.005 0.007 0.02 0.03 0.05 0.07 0.1 0.05 0.07 0.1 0.2 0.5 0.7 1.0 b rg @ i dss 0.25 i dss g ig @ i dss , 0.25 i dss b fg @ i dss
mpf102 http://onsemi.com 5 0 350 340 330 10 20 30 180 190 200 210 170 160 150 320 310 300 290 280 270 260 250 240 230 220 40 50 60 70 80 90 100 110 120 130 140 0 350 340 330 10 20 30 180 190 200 210 170 160 150 320 310 300 290 280 270 260 250 240 230 220 40 50 60 70 80 90 100 110 120 130 140 0 350 340 330 10 20 30 180 190 200 210 170 160 150 320 310 300 290 280 270 260 250 240 230 220 40 50 60 70 80 90 100 110 120 130 140 0 350 340 330 10 20 30 180 190 200 210 170 160 150 320 310 300 290 280 270 260 250 240 230 220 40 50 60 70 80 90 100 110 120 130 140 figure 13. s 11g figure 14. s 12g fi g ure 15. s 21g fi g ure 16. s 22g 0.7 0.6 0.5 0.4 0.3 0.04 0.5 0.4 0.3 0.2 1.0 0.9 0.8 0.7 0.6 0.03 0.02 0.01 0.0 0.01 0.02 0.03 0.04 0.1 900 900 800 700 600 500 300 200 100 800 700 600 500 400 300 200 100 i d = 0.25 i dss i d = i dss 100 200 300 400 500 600 700 800 900 900 600 700 800 i d = 0.25 i dss i d = i dss 100 900 100 900 i d = 0.25 i dss i d = i dss 1.5 100 400 500 600 700 800 900 i d = i dss , 0.25 i dss common gate characteristics sparameters (v ds = 15 vdc, t channel = 25 c, data points in mhz)
mpf102 http://onsemi.com 6 package dimensions case 2911 issue al to92 (to226ab) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 yle 5: pin 1. drain 2. source 3. gate
mpf102 http://onsemi.com 7 notes
mpf102 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mpf102/d thermal clad is a trademark of the bergquist company. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
|
